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| FDB2710 250V N-Channel PowerTrench MOSFET November 2006 FDB2710 250V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. tm Description * * * * * 50A, 250V, RDS(on) = 36.3m @VGS = 10 V Fast switching speed Low gate charge High performance trench technology for extremely low RDS(on) High power and current handling capability Application * PDP application D D G G S S Absolute Maximum Ratings Symbol VDS VGS ID IDM EAS dv/dt PD TJ, TSTG TL Drain-Source Voltage Gate-Source voltage Drain Current Drain Current - Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed (Note 1) (Note 2) (Note 3) Parameter Ratings 250 30 50 31.3 See Figure 9 145 4.5 260 2.1 -55 to +150 300 Unit V V A A A mJ V/ns W W/C C C Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds Thermal Characteristics Symbol RJC RJA* RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient* Thermal Resistance, Junction-to-Ambient Min ---- Max 0.48 40 62.5 Unit C/W C/W C/W *When mounted on the minimum pad size recommended (PCB Mount) (c)2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDB2710 Rev. A FDB2710 250V N-Channel PowerTrench MOSFET Package Marking and Ordering Information Device Marking FDB2710 Device FDB2710 Package D2-Pak Reel Size 330mm Tape Width 24mm Quantity 800 Electrical Characteristics Symbol Off Characteristics BVDSS BVDSS / TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr Notes: TC = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Conditions VGS = 0V, ID = 250A, TJ = 25C ID = 250A, Referenced to 25C VDS = 250V, VGS = 0V VDS = 250V, VGS = 0V,TC = 125C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 25A VDS = 10V, ID = 25A (Note 4) Min 250 -----3.0 ---- Typ -0.25 ----4.0 36.3 63 5470 426 97 80 252 112 154 78 34 18 Max Units --1 500 100 -100 5.0 42.5 -7280 570 146 170 515 235 320 101 --V V/C A A nA nA V m S pF pF pF ns ns ns ns nC nC nC On Characteristics Dynamic Characteristics VDS = 25V, VGS = 0V, f = 1.0MHz -----(Note 4, 5) Switching Characteristics VDD = 125V, ID = 50A VGS = 10V, RGEN = 25 ----- VDS = 125V, ID = 50A VGS = 10V (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 50A VGS = 0V, IS = 50A dIF/dt =100A/s (Note 4) ------ ---163 1.3 50 150 1.2 --- A A V ns C 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 1mH, IAS = 17A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 50A, di/dt 100A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDB2710 Rev. A 2 www.fairchildsemi.com FDB2710 250V N-Channel PowerTrench MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 500 VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Figure 2. Transfer Characteristics 250 100 150 C o 100 ID,Drain Current[A] ID,Drain Current[A] -55 C o 10 10 25 C o * Notes : 1. 250s Pulse Test 1 0.1 2. TC = 25 C o 1 * Notes : 1. VDS = 20V 2. 250s Pulse Test 1 VDS,Drain-Source Voltage[V] 10 4 6 8 VGS,Gate-Source Voltage[V] 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.07 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 150 100 * Notes : IS, Reverse Drain Current [A] RDS(ON) [], Drain-Source On-Resistance 0.06 1. VGS=0V 2. 250s Pulse Test 0.05 VGS = 10V 0.04 10 TA = 150 C o VGS = 20V TA = 25 C o 0.03 * Note : TJ = 25 C o 0.02 0 25 50 75 100 ID, Drain Current [A] 125 150 1 0.2 0.4 0.6 0.8 1.0 VSD, Body Diode Forward Voltage [V] 1.2 Figure 5. Capacitance Characteristics 9000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 10 VGS, Gate-Source Voltage [V] VDS = 50V VDS = 125V VDS = 200V 8 Capacitances [pF] 6000 Ciss 6 Coss 4 3000 Crss * Note: 1. VGS = 0V 2. f = 1MHz 2 * Note : ID = 50A 0 -1 10 10 10 VDS, Drain-Source Voltage [V] 0 1 30 0 0 10 20 30 40 50 60 Qg, Total Gate Charge [nC] 70 80 FDB2710 Rev. A 3 www.fairchildsemi.com FDB2710 250V N-Channel PowerTrench MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 BVDSS, [Normalized] Drain-Source Breakdown Voltage Figure 8. On-Resistance Variation vs. Temperature 2.5 rDS(on), [Normalized] Drain-Source On-Resistance 2 1.1 1.0 1 0.9 * Notes : 1. VGS = 0V 2. ID = 250A 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 0 -100 * Notes : 1. VGS = 10V 2. ID = 25A -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 9. Maximum Safe Operating Area 500 100 100s Figure 10. Maximum Drain Current vs. Case Temperature 60 50 ID, Drain Current [A] 40 30 20 10 0 25 Drain Current, ID [A] 10 1ms 1 Operation in This Area is Limited by R DS(on) * Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 10 ms DC 0.1 0.01 1 10 100 Drain-Source Voltage, VDS [V] 400 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve 10 0 Thermal Response [ZJC] 0.5 10 -1 0.2 0.1 0.05 PDM t1 * Notes : 1. ZJC(t) = 0.48 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZJC(t) -4 10 -2 0.02 0.01 t2 o Single pulse 10 -3 10 -5 10 10 -3 10 -2 10 -1 10 0 10 1 Rectangular Pulse Duration [sec] FDB2710 Rev. A 4 www.fairchildsemi.com FDB2710 250V N-Channel PowerTrench MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDB2710 Rev. A 5 www.fairchildsemi.com FDB2710 250V N-Channel PowerTrench MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FDB2710 Rev. A 6 www.fairchildsemi.com FDB2710 250V N-Channel PowerTrench MOSFET FDB2710 Rev. A 7 www.fairchildsemi.com FDB2710 250V N-Channel PowerTrench MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. OCXTM SILENT SWITCHER(R) UniFETTM FACT Quiet SeriesTM ACExTM OCXProTM UltraFET(R) GlobalOptoisolatorTM ActiveArrayTM SMART STARTTM (R) OPTOLOGIC GTOTM BottomlessTM SPMTM VCXTM HiSeCTM Build it NowTM StealthTM WireTM OPTOPLANARTM I2CTM CoolFETTM SuperFETTM PACMANTM CROSSVOLTTM SuperSOTTM-3 POPTM i-LoTM DOMETM SuperSOTTM-6 Power247TM ImpliedDisconnectTM EcoSPARKTM SuperSOTTM-8 PowerEdgeTM IntelliMAXTM E2CMOSTM SyncFETTM PowerSaverTM ISOPLANARTM TCMTM PowerTrench(R) LittleFETTM EnSignaTM TinyBoostTM MICROCOUPLERTM FACTTM QFET(R) TinyBuckTM MicroFETTM FAST(R) QSTM TinyPWMTM MicroPakTM QT OptoelectronicsTM FASTrTM TinyPowerTM MICROWIRETM Quiet SeriesTM FPSTM TinyLogic(R) MSXTM RapidConfigureTM FRFETTM MSXProTM RapidConnectTM TINYOPTOTM SerDesTM Across the board. Around the world.TM TruTranslationTM ScalarPumpTM The Power Franchise(R) UHCTM Programmable Active DroopTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 Preliminary No Identification Needed Full Production Obsolete Not In Production FDB2710 Rev. A 8 www.fairchildsemi.com |
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